Historically, the first ion implanter was helium based, constructed and operated in 1911 at Cavendish Laboratory in Cambridge by Ernest Rutherford and his students. In 1949, Shockley filed for a patent, “Semiconductor Translating Device” describing the p-n junction fabrication using ion implantation. In 1954, he filed another patent, “Forming of Semiconductor Devices by Ionic Bombardment”[…]
